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Renesas Electronics 7th-Generation 650V and 1250V IGBT Series sets a new technology benchmark enabling high efficiency solutions in Industrial Applications such as Inverters for Solar Power and Industrial Motors

Product Specifications of the 7th-Generation IGBTs

1. 650V-IGBT RJH/RJP65S Series

  • Items common to all product versions
    • Rated junction temperature (Tj): +150℃
    • Collector to emitter voltage rating (VCES): 650 V
    • Gate to emitter voltage rating (VGES): ±30 V
    • Collector to emitter saturation voltage (VCE(sat)): 1.6 V (typ) (Ta = 25℃, IC = Rating current, VGE = 15 V)
    • Gate-emitter threshold voltage (VGE(OFF)): 5.0 V to 6.8 V
    • Switching fall time (tf): 80 ns (VCC = 300 V, VGE = 15 V, Tj = 125℃, IC = Rating current)
    • Short circuit withstand time (tsc): 10 µs (min) (VCC = 360 V, VGE = 15 V, Tj = 150℃)
    • Shipping form: wafer/chip *Only RJH65S04DPQ-A0 is in TO-247A package
  • RJH65S04DPQ-A0
    • TO-247A Package, Built-in FRD
    • Collector to emitter current rating: 50 A (Tc = 100℃) 100 A (Tc = 25℃)
  • RJP65S03DWA/DWT
    • Collector to emitter current rating: 30 A (Tc = 100℃) 60 A (Tc = 25℃)
  • RJP65S04DWA/DWT
    • Collector to emitter current rating: 50 A (Tc = 100℃) 100 A (Tc = 25℃)
  • RJP65S05DWA/DWT
    • Collector to emitter current rating: 75 A (Tc = 100℃) 150 A (Tc = 25℃)
  • RJP65S06DWA/DWT
    • Collector to emitter current rating: 100 A (Tc = 100℃) 200 A (Tc = 25℃)
  • RJP65S07DWA/DWT
    • Collector to emitter current rating: 150 A (Tc = 100℃) 300 A (Tc = 25℃)
  • RJP65S08DWA/DWT
    • Collector to emitter current rating: 200 A (Tc = 100℃) 400 A (Tc = 25℃)

2. 1250V-IGBT RJP1CS Series

  • Items common to all product versions
    • Rated junction temperature (Tj): +150℃
    • Collector to Emitter voltage rating (VCES): 1250 V
    • Gate to emitter voltage rating (VGES): ±30 V
    • Collector to emitter saturation voltage (VCE(sat)): 1.8 V (typ) (Ta = 25℃, IC = Rating current, VGE = 15 V)
    • Gate-emitter threshold voltage (VGE(OFF)): 5.0 V to 6.8 V
    • Switching fall time (tf): 130 ns (VCC = 600 V, VGE = 15 V, Tj = 125℃, IC = Rating current)
    • Short circuit withstand time (tsc): 10 µs (min) (VCC = 720 V, VGE = 15 V, Tj = 150℃)
    • Shipping form: wafer/chip
  • RJP1CS03DWA/DWT
    • Collector to emitter current rating: 30 A (Tc = 100℃) 60 A (Tc = 25℃)
  • RJP1CS04DWA/DWT
    • Collector to emitter current rating: 50 A (Tc = 100℃) 100 A (Tc = 25℃)
  • RJP1CS05DWA/DWT
    • Collector to emitter current rating: 75 A (Tc = 100℃) 150 A (Tc = 25℃)
  • RJP1CS06DWA/DWT
    • Collector to emitter current rating: 100 A (Tc = 100℃) 200 A (Tc = 25℃)
  • RJP1CS07DWA/DWT
    • Collector to emitter current rating: 150 A (Tc = 100℃) 300 A (Tc = 25℃)
  • RJP1CS08DWA/DWT
    • Collector to emitter current rating: 200 A (Tc = 100℃) 400 A (Tc = 25℃)

Reference Diagram

Comparison of IGBTs' efficiency among three generations

Graph of turn off loss versus VCE for three generations of IGBTs; the 7th generation has the lowest turn off loss and conduction loss = high efficiency


The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

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